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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.68: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Optical characterization of epitaxially grown Zn_1−xMg_xO/ZnO quantum wells — •Thomas Sander¹, Peter J. Klar¹, Martin Eickhoff¹, and Thomas Wassner² — ¹JLU Giessen, Germany — ²WSI Munich, Germany

The Zn_1−xMg_xO/ZnO quantum wells and Zn_1−xMg_xO epitaxial layers were grown by molecular beam epitaxy on sapphire as well as on ZnO substrates. The photo-modulated reflectivity of the samples was measured at room temperature using a HeCd laser (325 nm) for modulation. The phonon spectra were investigated by Raman spectroscopy using different excitation wavelengths of 633 nm, 532 nm and 325 nm, respectively. The optical transitions in the photo-modulated spectra will be assigned and discussed in terms of the band structure. The changes of the Raman spectra of the epitaxial layers as a function of x will be analysed.