Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: Poster 1
HL 9.70: Poster
Montag, 23. März 2009, 14:30–17:00, P2
High Resolution RBS on High-k Dielectrics — •Maik Vieluf1,2, Rainer Grötzschel1, Christian Neelmeijer1, Frans Munnik1, and Steffen Teichert1,2 — 1Institute of Ion Beam Physics and Materials Research, FZD, Bautzner Landstraße 128, 01314 Dresden, Germany — 2Qimonda Dresden GmbH & Co. OHG, Koenigsbruecker Strasse 180, D-01099 Dresden, Germany
The further development of microelectronic circuits requires the usage of new materials and, consequently, the characterization of materials properties on the relevant length scale. In particular it is important to analyse the depth dependent element distribution or elemental composition on interfaces of new ultrathin layer stacks with subnanometer depth resolution. A well-established complementary method is High Resolution Rutherford Backscattering Spectrometry (HRRBS). This technique is based on binary elastic nuclear scattering with well known cross sections and the inelastic energy losses of incident ions. The high energy resolution, necessary for high depth resolution, is achieved using a Browne Buechner type magnetic spectrometer with a position sensitive detector (PSD) at the 3 MeV Tandetron accelerator of the FZD. We present recent results of the investigation of the initial stage of layer growth if ZrOx and HfOx on native SiOx or TiN. The shape of the high resolution energy spectra provides knowledge about interfaces between different layers. Furthermore, the elemental areal density is also an important parameter to obtain information about atomic layer growth. For this reason, the depth dependent charge state distribution of such ultrathin layers close to the surface is investigated and discussed.