Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.74: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Optimized cleaning procedures for silicon wafers — •Jochen Otzmann, Helmut Lochner, Peter Iskra, Dorota Kulaga-Egger, Torsten Sulima, and Ignaz Eisele — Universität der Bundeswehr München, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg

The usage of improved cleaning methods is an increasingly important issue for the fabrication of nanoscale semiconductor devices. Even smallest impurities can lead to a total loss of the device, due to leakage currents or interface traps for example.

We investigate improved cleaning procedures to decrease or remove organic and inorganic contaminations on wafer surfaces, like carbon impurities and the native or chemical oxide on silicon substrates. Therefore several different process plans were defined. P-i-n diodes were fabricated in an Applied Materials Centura Cluster Tool with epitaxial growth. The substrate was an n+Silicon 100 wafer. After several cleaning processes, all wafers got the same intrinsic layer and a p+Si top coating. To get the results the wafers were structured and analyzed. With the help of I-V measurements the p-i-n diodes were evaluated and secondary ion mass spectrometries (SIMS) affirm the results.

New results led us to further optimized processing parameters. We will present suggestions on potential improvements and results from our successful experiments