Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.81: Poster

Monday, March 23, 2009, 14:30–17:00, P2

GaN-based heterostructures for future spin electronic applications — •D. Broxtermann, C. Zube, A. Bedoya Pinto, J. Malindretos, and A. Rizzi — IV. Physikalisches Institut, Georg-August Universität Göttingen, D-37077 Göttingen, Germany

In combination with GaN based diluted magnetic semiconductors GaN/AlN resonant tunneling diodes are potential candidates for spin injectors/detectors. Furthermore 2DEG heterostructures consisting of the same materials could be utilized as diffusion channels in future spintronic applications. In this work we first optimize the MBE growth of GaN and thin AlN on MOCVD GaN templates to achieve good crystal quality and smooth GaN/AlN interfaces. Both are necessary to obtain highly efficient RTDs as well as high electron mobility 2DEGs. Effects of growth parameters on electrical properties are analyzed by magneto transport measurements and compared to calculations of a self-consisted Schrödinger-Poisson solver.