Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.85: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Influence of F8BT/P3HT blend composition on organic field-effect transistors — •Eva Johanna Feldmeier, Christian Melzer, and Heinz von Seggern — Electronic Materials Department, Institute of Materials Science, TU Darmstadt, Petersenstraße 23 , 64287 Darmstadt, Germany

The ambipolar poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) and p-type regioregular poly(3-hexylthiophene) (P3HT) are well known in the field of photovoltaic cells, where they act as electron acceptor and electron donor, respectively. Here ambipolar top-gate organic field-effect transistors from different blends of F8BT and P3HT with Au source and drain contacts are analysed with respect to charge-carrier transport properties in dependence of the blend composition. The change in transistor performance will be investigated on basis of the respective transfer characteristics and of the device parameters extracted from the saturation regimes. The evolution of the extracted field-effect mobilities and threshold voltages of both charge carrier species will be discussed considering the injection and transport properties of the individual materials as well as the energetics of the investigated blend.