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Mo, 10:15–12:45 |
BEY 81 |
HL 1: III-V semiconductors I |
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Mo, 10:15–12:15 |
BEY 118 |
HL 2: GaN: devices |
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Mo, 10:15–12:45 |
BEY 154 |
HL 3: Heterostructures |
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Mo, 10:15–12:45 |
POT 51 |
HL 4: II-VI semiconductors |
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Mo, 10:15–13:15 |
POT 151 |
HL 5: Photovoltaic |
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Mo, 11:00–11:45 |
HSZ 01 |
HL 6: Invited Talk Fromherz |
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Mo, 13:30–17:00 |
BEY 118 |
HL 7: Quantum dots: Optical properties I |
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Mo, 14:00–14:45 |
HSZ 01 |
HL 8: Invited Talk Ludwig |
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Mo, 14:30–17:00 |
P2 |
HL 9: Poster 1 |
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Mo, 14:45–15:30 |
HSZ 01 |
HL 10: Invited Talk Dietsche |
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Di, 09:30–12:45 |
HSZ 01 |
HL 11: Focused Session: Semi- and nonpolar group III nitrides I |
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Di, 09:30–12:30 |
BEY 81 |
HL 12: Spin controlled transport I |
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Di, 09:30–13:00 |
BEY 118 |
HL 13: Optical properties |
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Di, 09:30–10:00 |
BEY 154 |
HL 14: Preparation and characterization |
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Di, 09:30–13:00 |
POT 51 |
HL 15: C/diamond I |
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Di, 09:30–12:00 |
POT 151 |
HL 16: III-V semiconductors II |
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Di, 10:00–13:00 |
BEY 154 |
HL 17: Quantum wires: Optical and transport properties |
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Di, 12:00–13:00 |
POT 151 |
HL 18: Impurities/amorphous semiconductors |
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Di, 12:30–13:00 |
BEY 81 |
HL 19: Theory of electronic structure |
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Di, 14:00–14:45 |
HSZ 01 |
HL 20: Invited Talk Yakovlev |
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Di, 14:00–16:00 |
BEY 81 |
HL 21: Devices |
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Di, 14:00–16:30 |
BEY 118 |
HL 22: Focused Session: Semi- and nonpolar group III nitrides II |
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Di, 14:00–15:15 |
BEY 154 |
HL 23: Transport in high magnetic field/quantum-Hall-effect |
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Di, 14:45–15:30 |
HSZ 01 |
HL 24: Invited Talk Neumaier |
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Di, 16:00–16:30 |
POT 51 |
HL 25: C/diamond II |
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Mi, 09:30–13:00 |
HSZ 01 |
HL 26: Focused Session: Novel nanowires electronic device concepts |
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Mi, 09:30–13:00 |
BEY 81 |
HL 27: GaN: preparation and characterization I |
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Mi, 09:30–13:00 |
BEY 118 |
HL 28: ZnO: preparation and characterization I |
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Mi, 09:30–13:00 |
BEY 154 |
HL 29: Quantum dots: Optical properties II |
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Mi, 09:30–13:00 |
POT 51 |
HL 30: Si/Ge |
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Mi, 13:00–13:45 |
HSZ 01 |
HL 31: Walter Schottky Prize |
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Mi, 14:00–15:30 |
HSZ 01 |
HL 32: Focused Session: Quantum optomechanics |
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Mi, 14:00–17:15 |
BEY 81 |
HL 33: Quantum wires: preparation and characterization |
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Mi, 14:00–17:00 |
BEY 118 |
HL 34: Spin controlled transport II |
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Mi, 14:00–17:45 |
BEY 154 |
HL 35: Semiconductor Laser |
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Mi, 14:00–16:15 |
POT 51 |
HL 36: ZnO: preparation and characterization II |
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Mi, 16:15–18:00 |
POT 51 |
HL 37: ZnO: devices |
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Do, 09:30–11:45 |
HSZ 01 |
HL 38: Focused Session: Different realizations of quantum registers |
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Do, 09:30–13:00 |
BEY 81 |
HL 39: Quantum dots: Optical and transport properties |
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Do, 09:30–12:45 |
BEY 118 |
HL 40: ZnO: preparation and characterization III |
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Do, 09:30–13:00 |
BEY 154 |
HL 41: GaN: preparation and characterization II |
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Do, 09:30–10:45 |
POT 51 |
HL 42: Interfaces/surfaces |
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Do, 09:30–12:30 |
POT 151 |
HL 43: Photonic crystals I |
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Do, 10:45–13:00 |
POT 51 |
HL 44: Organic semiconductors I |
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Do, 11:45–12:30 |
HSZ 01 |
HL 45: Invited Talk Liu |
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Do, 12:30–13:00 |
POT 151 |
HL 46: Hybrid systems |
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Do, 14:00–14:45 |
HSZ 01 |
HL 47: Invited Talk Meyer |
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Do, 15:00–17:30 |
P2 |
HL 48: Poster 2 |
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Fr, 10:15–12:45 |
BEY 81 |
HL 49: Quantum dots: preparation and characterization |
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Fr, 10:15–12:45 |
BEY 118 |
HL 50: Ultra fast phenomena |
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Fr, 10:15–12:45 |
BEY 154 |
HL 51: Photonic crystals II |
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Fr, 10:15–12:30 |
POT 51 |
HL 52: Organic semiconductors II |
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Fr, 10:15–11:45 |
POT 151 |
HL 53: Transport properties |
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Fr, 11:00–11:45 |
HSZ 01 |
HL 54: Invited Talk Hübner |
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