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MA: Fachverband Magnetismus
MA 13: Poster Ia: Electron Theory (1); Magnetic Imaging (2,3); Thin Films (4-25); MSMA (26-33); Magn. Semiconductors (34-42); Magn. Half Metals and Oxides (43-60)
MA 13.27: Poster
Tuesday, March 24, 2009, 10:15–13:00, P1A
Sputter deposited epitaxial Ni-Mn-Ga films on various substrates — •Anja Backen1,2, Stefan Kaufmann1, Jörg Buschbeck1,2, Ludwig Schultz1,2, and Sebastian Fähler1 — 1IFW Dresden, Institute for Metallic Materials, P.O. Box: 270116, 01171 Dresden, Germany — 2Departement of Mechanical Engineering, Institute for Material Science, Dresden University of Technology, 01062 Dresden, Germany
Due to their large strain up to 10 % magnetic shape memory alloys (MSM) are a promising class of active materials that can be integrated in microdevices. The deposition of epitaxial films is most suitable for this application since significant strains have only been observed in bulk single crystals. Tailoring the microstructure of the films is crucial in order to obtain high strains by magnetically induced reorientation (MIR) via twin boundary motion. Extensive research effort has been put into the investigation of the MSM alloy Ni-Mn-Ga which was deposited on various substrates (Al2O3, SrTiO3, NaCl, MgO) by DC sputtering. In order to release the films from the substrates the concept of a sacrificial buffer layer is used. We focus on epitaxial Ni-Mn-Ga films deposited on MgO substrates with Cr buffers while varying the deposition parameters. First results on both constraint and freestanding films will be presented.