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MA: Fachverband Magnetismus
MA 13: Poster Ia: Electron Theory (1); Magnetic Imaging (2,3); Thin Films (4-25); MSMA (26-33); Magn. Semiconductors (34-42); Magn. Half Metals and Oxides (43-60)
MA 13.36: Poster
Dienstag, 24. März 2009, 10:15–13:00, P1A
Relativistic electronic structure of Mn-doped GaAs — •Ilja Turek1, Vaclav Drchal2, and Josef Kudrnovsky2 — 1Institute of Physics of Materials, ASCR, Brno, Czech Republic — 2Institute of Physics, ASCR, Prague, Czech Republic
Electronic structure of Mn-doped GaAs diluted magnetic semiconductor is studied by means of the first-principles TB-LMTO method within the local spin-density approximation (LSDA) and the coherent potential approximation (CPA). Particular attention is paid to an interplay of chemical disorder, spin polarization and spin-orbit interaction (SOI). The results prove that the SOI has a negligible effect on integral properties (magnetic moments, densities of states) but it destroys the perfect spin polarization of states at the Fermi energy. Inspection of the Bloch spectral functions, evaluated along high-symmetry lines of the Brillouin zone, reveals that the majority spin states around the Fermi energy exhibit a very strong disorder. The minority spin states at the top of the valence band are only weakly affected by the randomness; their broadening is enhanced due to the SOI and the strong disorder in the majority-spin channel. Magnetic anisotropy of the electronic structure for reciprocal vectors parallel and perpendicular to the magnetization direction is negligible.