Dresden 2009 – scientific programme
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MA: Fachverband Magnetismus
MA 13: Poster Ia: Electron Theory (1); Magnetic Imaging (2,3); Thin Films (4-25); MSMA (26-33); Magn. Semiconductors (34-42); Magn. Half Metals and Oxides (43-60)
MA 13.47: Poster
Tuesday, March 24, 2009, 10:15–13:00, P1A
Electronic and magnetic properties of doped ZnO — •Igor Maznichenko1, Arthur Ernst2, Sergey Ostanin2, Markus Däne1,3, Ingrid Mertig1,2, Patrick Bruno2,4, Wolfram Hergert1, Jürgen Henk2, Martin Lüders3, Zdzislawa Szotek3, and Walter Temmerman3 — 1Martin-Luther-Universität Halle-Wittenberg, Institut für Physik, D-06099 Halle, Germany — 2Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany — 3Daresbury Laboratory, Daresbury, Warrington WA4 4AD, Cheshire, United Kingdom — 4European Synchrotron Radiation Facility - BP 220, F-38043 Grenoble Cedex, France
Oxides are interesting materials with a high potential for opto and spin electronics. Semiconductors based on ZnO demonstrate properties wanted for both of these applications. Its combination with the well known spacer material MgO exhibits extraordinary properties as a function of concentration. First of all, the binary alloy Zn1−xMgxO undergoes a structural phase transition from the wurtzite structure of ZnO to the rock-salt structure of MgO. Second, the band gap of the alloy changes from 3.4 eV for x=0 to 7.2 eV for x=1.
ZnO based diluted magnetic semiconductors demonstrate different magnetic properties depending on the type of dopant, its concentration and distribution. Especially important for applications is the existence of room temperature ferromagnetism.
First-principle studies were performed within the framework of the Korringa-Kohn-Rostoker method. The temperature-dependent magnetic properties were calculated by mapping onto a Heisenberg model.