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MA: Fachverband Magnetismus

MA 24: Magnetic Semiconductors

MA 24.17: Vortrag

Mittwoch, 25. März 2009, 19:00–19:15, HSZ 401

Structural, chemical and magnetic characterization of epitaxial Fe on (Ga, Mn)As (001) — •Marcello Soda, Martin Utz, Werner Wegscheider, Josef Zweck, and Christian Horst Back — Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Universitätstr. 31, 93053 Regensburg, Germany

An epitaxial Fe-film grown on the dilute magnetic semiconductor GaMnAs (001) induces antiferromagnetic coupling between the two materials at room temperature.

It is known that a 2 nm thick GaMnAs layer at the interface shows induced magnetic order at room temperature [1].

TEM analysis of the Fe/(Ga, Mn)As interface, in situ XPS measurements and MOKE measurements characterize the epitaxial quality and the magnetic properties of this material. TEM micrographs shows an epitaxial growth of Fe with a roughness of 2-3 monolayer confirming the good quality of the surface treatment. XPS measurements demonstrate the absence of intermixing between the two materials.

Finally MOKE curves of Fe/(Ga, Mn)As, compared to that of the as grown GaMnAs, demonstrate the superposition of the magnetic properties of Fe and GaMnAs.

[1] F. Maccherozzi et al. accepted for publishing on PRL