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MA: Fachverband Magnetismus

MA 32: Magnetic Thin Films III

MA 32.5: Vortrag

Donnerstag, 26. März 2009, 11:15–11:30, HSZ 403

Epitaxial growth of magnetite thin films for spintronics — •Mehrdad Baghaie-Yazdi¹, Jose Kurian¹, Emanuel Ionescu², Erwin Hildebrandt¹, and Lambert Alff¹ — ¹Dünne Schichten, Materialwissenschaft TU-Darmstadt, Darmstadt, Deutschland — ²Disperse Feststoffe, Materialwissenschaft TU-Darmstadt, Darmstadt, Deutschland

Magnetite is a promising material for spintronics application due to its high Curie temperature and half-metallic behavior. We have deposited magnetite thin films using both RF-Magnetron Sputtering and reactive Molecular Beam Epitaxy (MBE). Single crystal c-cut sapphire and MgO were used as substrates. Layer-by-layer growth was monitored by Reflection High-Energy Electron Diffraction (RHEED). The thin film samples were characterized by X-Ray diffraction and reflectometry, Superconducting Quantum Interference magnetometry, Raman spectroscopy and temperature vs. resistivity measurements. Optimized deposition conditions in MBE growth lead to Fe₃O₄ epitaxial thin films with a magnetization very close to the ideal value of 4 µ_B/f.u. at 300 K and an extremely sharp Verwey transition around 119 K.