Dresden 2009 – scientific programme

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MA: Fachverband Magnetismus

MA 37: Spin Dependent Transport Phenomena

MA 37.11: Talk

Thursday, March 26, 2009, 18:00–18:15, HSZ 403

Current induced resistance change of magnetic tunnel junctions — •Patryk Krzysteczko¹, Xinli Kou^1,2, Karsten Rott¹, Andy Thomas¹, and Günter Reiss¹ — ¹Thin Films and Physics of Nanostructures, Bielefeld University, 33615 Bielefeld, Germany — ²School of Physical Science and Technology, Lanzhou Universuty, Lanzhou, China

Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down to 4.4 Ωµm². If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes during stressing and one relaxation process afterwards. Here, we analyze the time dependence of the resistance and use a simple model to explain the observed behavior. The explanation is furter supported by numerical fits to the data in order to quantify the timescales of the involved phenomena.