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MA: Fachverband Magnetismus
MA 37: Spin Dependent Transport Phenomena
MA 37.12: Vortrag
Donnerstag, 26. März 2009, 18:15–18:30, HSZ 403
Resistance of domain walls in epitaxial Fe wires on GaAs(110) — •Christoph Hassel1, Florian M. Römer1, Nathalie Reckers1, Sven Stienen1, Florian Kronast2, Günter Dumpich1, and Jürgen Lindner1 — 1Fachbereich Physik, AG Farle, CeNIDE, Universität Duisburg-Essen, 47048 Duisburg, Germany — 2Bessy GmbH, Berlin
From epitaxial Fe films grown on GaAs (110) wires of different widths are prepared using electron beam lithography and Ar sputtering. Since the coercive field of longitudinally magnetized wires depends on the width of the wires, it is possible to pin a domain wall at the transistion between a smaller and a wider wire. The resistance of this domain wall is measured and contains contributions from the anisotropic magnetoresistance (AMR) and the domain wall resistance. Micromagnetic calculations are performed to study the structure of the domain wall and estimate contributions of the AMR. Furthermore, a magetic force microscope tip is used to create a different number of domain walls in transversally magnetized wires in a controlled way. The additional resistance contribution due to the presence of the domain walls is measured and the contributions from AMR are estimated by micromagnteic calculation. This work is financially supported within the SFB 491.