Dresden 2009 – scientific programme
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MA: Fachverband Magnetismus
MA 37: Spin Dependent Transport Phenomena
MA 37.15: Talk
Thursday, March 26, 2009, 19:00–19:15, HSZ 403
Hall effect and electronic structure of half metallic Co2FexMn1−xSi films — •Gerhard Jakob1, Horst Schneider1, Enrique Vilanova1, Stanislav Chadov2, Gerhard Fecher2, and Claudia Felser2 — 1Institute of Physics, Johannes Gutenberg-University, 55099 Mainz, Germany — 2Institute of Anorganic and Analytical Chemistry, Johannes Gutenberg-University, 55099 Mainz, Germany
Half metals are defined by the existence of an energy gap at the Fermi energy for one spin direction. Keeping half metallicity at room temperature requires not only a large gap but also the Fermi energy to be far away from the band edges. As a model system we chose the system Co2FexMn1−xSi, where the Fermi energy was calculated to move from the valence band edge of the minority states to the conduction band edge with increasing x. On high quality laser ablated epitaxial films we observe a sign change of the normal and anomalous Hall effect with doping. The experiments are discussed in comparison to band structure calculations done in the LSDA+U scheme.
Financial support by the DFG through project Ja821/2-3 within research unit 559 is gratefully acknowledged