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MA: Fachverband Magnetismus

MA 40: Poster II: Bio- and Molecular Magnetism (1-9); Magnetic Coupling Phenomena/Exchange Bias (10-15); Magnetic Particlicles and Clusters (16-29); Micro and Nanostructured Magnetic Materials (30-51); Multiferroics (52-64); Spin Injection in Heterostructures (65-67); Spin-Dyn./Spin-Torque (68-93); Spindependent Transport (94-108)

MA 40.101: Poster

Freitag, 27. März 2009, 11:00–14:00, P1A

Magnetoresistance and electroresistance in BiMnO₃ based tunnel junctions — •Nicki Hinsche¹, Michael Fechner^1,2, Igor Maznichenko¹, Peter Bose^1,2, Sergei Ostanin², Arthur Ernst², Juergen Henk², Peter Zahn¹ und Ingrid Mertig^1,2 — ¹Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, D-06099 Halle, Germany — ²Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany

The tunneling magnetoresistance (TMR) and electroresistance (TER) of BiMnO₃ based tunnel junctions are investigated by means of a combined ab initio and model calculation. The structural relaxation of the barrier material was performed using the VASP package. The electronic structure, and especially the complex band structure of the barrier, are calculated within density functional theory in self-interaction-corrected local density approximation (SIC-LDA) using a KKR multiple scattering scheme. The potential profile in the barrier is determined by the material polarization and the different screening lengths in the electrodes. We assumed a half-metallic and a nobel metal electrode. The influence of the barrier polarization, the BiMnO₃ complex band strucure, and the screening properties of the electrodes on the TMR and TER will be discussed.