Dresden 2009 – scientific programme

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MA: Fachverband Magnetismus

MA 40: Poster II: Bio- and Molecular Magnetism (1-9); Magnetic Coupling Phenomena/Exchange Bias (10-15); Magnetic Particlicles and Clusters (16-29); Micro and Nanostructured Magnetic Materials (30-51); Multiferroics (52-64); Spin Injection in Heterostructures (65-67); Spin-Dyn./Spin-Torque (68-93); Spindependent Transport (94-108)

MA 40.81: Poster

Friday, March 27, 2009, 11:00–14:00, P1A

Current induced switching of MgO-based MTJs at different temperatures — •Markus Schäfers, Andy Thomas, Karsten Rott, and Günter Reiss — Bielefeld University, Universitätsstrasse 25, D-33615 Bielefeld, Germany

A spin-polarized current injected into a nanomagnet applies a torque to the magnetization and induces a precession or even a reversal of the magnetization direction. This spin-torque effect has generated much interest because it can be used as writing mechanism to store information in magnetic random access memory (MRAM). An extensive understanding of the switching process is necessary to produce high performance memory cells.

Here, we prepared sub-µm-sized MTJs with different free layer thicknesses based on CoFeB/MgO/CoFeB by e-beam lithography and argon ion beam etching. We compare the critical current densities for switching the free layer of these samples at different temperatures.

Samples were provided by Singulus Nanodeposition Technologies GmbH.