Dresden 2009 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
MA: Fachverband Magnetismus
MA 40: Poster II: Bio- and Molecular Magnetism (1-9); Magnetic Coupling Phenomena/Exchange Bias (10-15); Magnetic Particlicles and Clusters (16-29); Micro and Nanostructured Magnetic Materials (30-51); Multiferroics (52-64); Spin Injection in Heterostructures (65-67); Spin-Dyn./Spin-Torque (68-93); Spindependent Transport (94-108)
MA 40.96: Poster
Friday, March 27, 2009, 11:00–14:00, P1A
Electronic structure in mesoscopic systems under finite bias — •Steven Walczak1,2, Michael Czerner2, Christian Heiliger3, and Ingrid Mertig2 — 1Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany — 2Institute of Physics, Martin Luther University Halle-Wittenberg, D-06120 Halle (Saale), Germany — 3I. Physikalisches Institut, Justus Liebig University, D-35392 Giessen, Germany
The understanding of the I-V-characteristics is a key issue in ballistic transport. In particular, the voltage drop within the scattering region depends strongly on the geometry of the system. For example in a tunnel junction one expects a simple linear voltage drop over the barrier but for atomic contacts, nanowires, or molecules the voltage drop is expected to be more complicated. To account for these systems we extend our implementation of the Keldysh formalism in the Korringa-Kohn-Rostoker Green’s function method [1]. Furthermore, a real space formulation of the Keldysh equation is used to describe open systems which exhibit broken translational symmetry like atomic contacts or nanowires.
Our extension includes the self-consistent treatment of the system under applied bias using the non-equilibrium density between the chemical potentials of the left and the right lead. The voltage drop within the system is then proportional to the difference of the densities with and without an applied voltage.
[1] C. Heiliger, M. Czerner, B. Yavorsky, I. Mertig, M. Stiles, J. Appl. Phys. 103, 07A709 (2008)