Dresden 2009 – scientific programme

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MA: Fachverband Magnetismus

MA 7: Spin-Dynamics/ Spin-Torque II

MA 7.10: Talk

Monday, March 23, 2009, 17:45–18:00, HSZ 04

A Current Controlled Random-Access Memory Based On Magnetic Vortex Handedness — •Stellan Bohlens¹, Benjamin Krüger¹, André Drews², Markus Bolte², Guido Meier², Ulrich Merkt², and Daniela Pfannkuche¹ — ¹I. Institut für Theoretische Physik, Universität Hamburg, Hamburg, Germany — ²Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Hamburg, Germany

We propose a memory element based on a magnetic vortex which is operated simultaneously by a spin-polarized current and a magnetic field. [1] Starting from our recent analytical description of the vortex motion [2,3] we have developed a scheme that allows to transfer the vortex into an unambiguous binary state. This state is defined as the product of chirality and core polarization named the vortex handedness.

The VRAM is non-volatile and the stability requirements for a memory device are fulfilled: the vortex state is stable against temperature and static magnetic fields as long as they remain in the millitesla regime. Foremost, the VRAM is a fast memory concept which needs no reading and no erasing before writing.

[1] S. Bohlens, et al., Appl. Phys. Lett. 93, 142508 (2008)

[2] M. Bolte, et al., Phys. Rev. Lett. 100, 176601 (2008)

[3] B. Krüger, et al., Phys. Rev. B 76, 224426 (2007)