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MM: Fachverband Metall- und Materialphysik
MM 18: Mechanical Properties IV
MM 18.2: Vortrag
Dienstag, 24. März 2009, 12:15–12:30, IFW D
Influence of Cu atoms on the mobility of dislocations in Cu-doped Al - an atomistic study. — •Thomas Gnielka1, Pim Schravendijk2, Christian Elsässer2, and Peter Gumbsch1,2 — 1Universität Karlsruhe (TH), Kaiserstr. 12, 76131 Karlsruhe — 2Fraunhofer IWM, Wöhlerstr. 11, 79108 Freiburg
The influence of substitutional Cu atoms on the mobility of edge dislocations in Cu-doped Al was investigated by means of molecular dynamics simulations with central-force many-body potentials for interatomic interactions in the binary Al-Cu system. For a random distribution of Cu atoms in a low concentration range (up to 0.4% Cu) the damping coefficient and the critical shear stress for the motion of straight dislocations was analyzed.
Furthermore the interaction of edge dislocations with a Σ3 (111) [1-10] symmetrical tilt grain boundary was studied. Up to an applied strain of 1% no propagation of the dislocations across the boundary was achieved. The underlying structural mechanism will be discussed.