Dresden 2009 – scientific programme
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MM: Fachverband Metall- und Materialphysik
MM 35: Poster Session II
MM 35.2: Poster
Wednesday, March 25, 2009, 16:30–18:30, P4
Conductivity measurements on FeSi and the influence of the stoichiometry on the susceptibility — •Miriam Friedemann, Dirk Menzel, and Joachim Schoenes — Institut für Physik der Kondensierten Materie, TU Braunschweig, Germany
Conductivity measurements on FeSi single crystals grown via the Czochralski method were performed and interpreted within a model containing two rectangular bands as well as two parabolic bands. The two gaps which are observed in Raman [1] and Fourier-spectroscopy [2] respectively, have been confirmed. We found evidence for an additional small gap of the size 6 meV which most likely stems from the existence of a small amount of impurity atoms acting as acceptors. The susceptibility of Fe1−xSix single crystals with light variance of the ratio Fe/Si =1 was measured. It shows that the lowest residual susceptibility at low temperatures is achieved with a light Si excess. As evidenced by measurements on samples before and after annealing, the residual susceptibility is also affected by crystal defects.
[1] A.-M. Racu et al., Phys. Rev. B 76, 115103 (2007).
[2] D. Menzel et al., submitted to Phys. Rev. B.