Dresden 2009 – scientific programme

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MM: Fachverband Metall- und Materialphysik

MM 8: Topical Session Nanoporous Functional Materials III

MM 8.4: Talk

Monday, March 23, 2009, 16:15–16:30, IFW A

Electrochemically-gated field-effect transistor with Indium Tin Oxide nanoparticles as active layer — •Subho Dasgupta, Robert Kruk, and Horst Hahn — Institute for Nanotechnology, Forschungszentrum Karlsruhe GmbH, P.O. Box 3640, D-76021 Karlsruhe, Germany

We report a Field Effect Transistor (FET) device with a Transparent Conducting Oxide (TCO) nanoparticle channel, using solid electrolyte as a gate [1]. FETs in the nanometer scale require channel conductivities as high as possible, therefore, a conductor like Indium Tin Oxide (ITO) was chosen as an active element. ITO nanoparticles were used in order to maximize the active surface area. In the present work, the device principle is based on the variation of the drain current induced by the capacitive double layer charging at the electrolyte/nanoparticle interfaces. The device with metallic conducting channel made of ITO nanoparticles exhibits an on/off ratio of 2×10³ even when the gate potential is limited within the electrochemical capacitive region to avoid redox reactions at the interface. The field-effect mobility is calculated to be 24.3 cm²/Vs which exceeds the values reported earlier for the PbSe and In₂O₃ nanocrystalline channel FETs. A subthreshold swing between 230-425 mV/decade is observed.

[1] S. Dasgupta, S. Gottschalk, R. Kruk, H. Hahn, Nanotechnology 19, 435203 (2008)