Dresden 2009 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 10: Oxides and insulators II
O 10.4: Vortrag
Montag, 23. März 2009, 15:45–16:00, SCH A01
Preparation and investigation of NdGaO3(110) surfaces — •Rasuole Dirsyte1, Jutta Schwarzkopf1, Jens Lienemann2, Marco Busch2, Helmut Winter2, and Roberto Fornari1,2 — 1Leibniz Institute for Crystal Growth, Max Born Straße 2, D - 12489 Berlin, Germany — 2Department of Physics, Humboldt University, Newtonstraße 15, D - 12489 Berlin, Germany
Atomically smooth, single terminated surfaces are required for the controlled and epitaxial growth of oxide films. NdGaO3 is one of the promising substrates for the epitaxial growth of superconducting, ferroelectric, dielectric, and magneto-resistive materials, due to its chemical and structural compatibility. The preparation conditions of NdGaO3 wafers were optimised by changing the annealing temperature and time in order to obtain surfaces with an atomically smooth step-and-terrace structure. After preparation of a regularly stepped surface the substrates were exposed to different oxygen-argon atmospheres at fixed substrate temperature of 730°C in order to simulate the thermal conditions met before starting the MO-CVD growth process. The annealing in pure argon atmosphere leads to total degradation of the step-and-terrace structure, while the surface structure could be preserved in argon/oxygen mixture with low oxygen content (2 %). The surface roughness as well as the width of the terraces and the height of the steps was measured by AFM in contact mode. The termination of NdGaO3(110) surface was determined by the means of proton- and electron-induced AES.