Dresden 2009 – scientific programme

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O: Fachverband Oberflächenphysik

O 15: Focused Session: Epitaxial Graphene II

O 15.1: Topical Talk

Monday, March 23, 2009, 15:00–15:30, SCH 251

Structure and Growth of Epitaxial Graphene on SiC: a New Platform for Carbon Electronics — •Edward Conrad — The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, USA

The use of epitaxial graphene as a platform for carbon electronics hinges on a number of properties of graphene: growth, structure and transport. While graphene grown on both the Si-face and C-face of SiC are possible alternatives for device materials, I will show in this talk that C-face graphene currently offers the most immediate advantages to graphene device growth and fabrication. I will show how transport properties of C-face graphene make growth problems such as controlling thickness or uniformity much less relevant than on Si-face graphene. LEEM, PEEM, x-ray diffraction and transport measurements will be presented to elucidate the unique structure of C-face graphene films. I will also review new work on how to passivate charge transport between the SiC and the graphene.