O 15: Focused Session: Epitaxial Graphene II
Montag, 23. März 2009, 15:00–16:30, SCH 251
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15:00 |
O 15.1 |
Topical Talk:
Structure and Growth of Epitaxial Graphene on SiC: a New Platform for Carbon Electronics — •Edward Conrad
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15:30 |
O 15.2 |
Effects of periodic potentials in graphene — •Ervand Kandelaki, Sam Shallcross, and Oleg Pankratov
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15:45 |
O 15.3 |
An ab initio study of graphene buffer layers on SiC — •Stephan Hensel, Michel Bockstedte, and Oleg Pankratov
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16:00 |
O 15.4 |
Dynamical properties of cubic and hexagonal silicon carbide from Si-rich to C-rich reconstructions up to graphene formation — •Juergen A. Schaefer and Roland J. Koch
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16:15 |
O 15.5 |
Graphene nanomembranes excited by ac voltages of an STM — •Torge Mashoff, Viktor Geringer, Tim Echtermeyer, Max Lemme, Marcus Liebmann, Marco Pratzer, and Markus Morgenstern
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