Dresden 2009 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
O: Fachverband Oberflächenphysik
O 22: Focused Session: Epitaxial Graphene III
O 22.6: Talk
Tuesday, March 24, 2009, 12:15–12:30, SCH 251
Ambient pressure CVD grown and transferred graphene: STM and UPS study — •Roland J. Koch1, 2, Alfonso Reina1, Juergen A. Schaefer2, and Jing Kong1 — 1Department of Materials Science and Engineering, Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA — 2Institut für Physik and Institut für Mikro- und Nanotechnologien, Technische Universität Ilmenau, P. O. Box 100565, 98684 Ilmenau, Germany
We used polycrystalline nickel as a substrate to synthesize few layer graphene(FLG) via Chemical Vapor Deposition (CVD). These samples have been analyzed using scanning tunneling microscopy(STM) and ultra violet photoelectron spectroscopy(UPS). In addition, the FLG transferred to other Ni and Si/SiO2 samples were characterized. Large Moiré patterns have been observed by STM on both, the transferred and the not transferred samples, indicating a stacking disorder between first and second graphene layer. This is in line with results of FLG grown on SiC by Si sublimation[Varchon et al., Phys. Rev. B 77, 165415 2008]. The UPS measurements show a strong correlation of the quality and structure of the graphene films and a final state effect above vacuum level.