Dresden 2009 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)

O 27.100: Poster

Dienstag, 24. März 2009, 18:30–21:00, P2

STM growth study of epitaxial graphene on SiC(0001) — •Anne Majerus, Viktor Geringer, Sven Runte, Marcus Liebmann, and Markus Morgenstern — II. Physikalisches Institut, RWTH Aachen and JARA-FIT, Otto-Blumenthal-Straße, 52074 Aachen

The easiest way to produce graphene is mechanical exfoliation from graphite crystals [K. S. Novoselov et al., Science 306, 666 (2004)]. However, the preparation of graphene under clean conditions requires the use of ultra high vacuum (UHV) [I. Forbeaux et al. , Appl. Surf. Sci. 162, 406 (2000)].

In this work, we present a growth study of graphene on SiC. An untreated SiC(0001) crystal was put through several annealing cycles until we produced a few layers of epitaxial graphene. To determine the changes in the morphology during the different stages of graphitization, low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM) measurements were performed. The surface structures determined by LEED could also be detected directly by STM, exhibiting atomic resolution.