Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)
O 27.103: Poster
Dienstag, 24. März 2009, 18:30–21:00, P2
Comparative study of graphene films on two hexagonal SiC surfaces produced in different environments — •K.V. Emtsev1, T. Ohta2, Th. Seyller1, L. Ley1, A. Bostwick3, K. Horn4, G. Kellog2, J.L. McChesney3, E. Rotenberg3, and A.K. Schmid5 — 1FAU Erlangen-Nürnberg — 2Sandia National Laboratories, USA — 3Advances Light Source, USA — 4FHI, Berlin — 5National Center for Electron Spectroscopy, USA
In present work we discuss the graphene formation on both hexagonal SiC surfaces carried out in different environments and in dependence of several processing conditions. As was shown recently [1] the domain size of graphene monolayer formed on SiC(0001) surface in an inert atmosphere can extend over several tens of micrometers in contrast to samples prepared in vacuum showing small domains. The graphene layers were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and low energy electron microscopy. As compared to vacuum annealing, graphitization in inert atmosphere takes place at higher temperature. This has a profound effect on the morphology of the surfaces. The time dependence of graphene film thickness is quite different for two crystal orientations. While the thickness saturates rapidly for graphene on the (0001) surface, the (000-1) surface of SiC shows an unsaturated growth for film thicknesses of up to tens of monolayers. The nucleation of graphene on the (0001) surface is more homogeneous and is initiated at the substrate steps. On the (000-1) surface an inhomogeneous multilayer nucleation is observed. [1] K.V. Emtsev, et al, arXiv:0808.1222v1.