Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)
O 27.105: Poster
Dienstag, 24. März 2009, 18:30–21:00, P2
Atomic Layer Deposition of Aluminum Oxide Films on Graphite and Graphene — •Florian Speck, Markus Ostler, Jonas Röhrl, Konstantin V. Emtsev, Lothar Ley, and Thomas Seyller — Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, D-91058 Erlangen, Germany
The fabrication of top-gated graphene-based field effect devices requires the deposition of a suitable gate insulator on graphene. Atomic layer deposition (ALD) is a low-temperature process, which could be useful for this purpose. Therefore, we studied the growth of aluminum oxide (Al2O3) from trimethylaluminum (TMA) and water (H2O) or ozone (O3) on highly oriented pyrolytic graphite and graphene. Graphene was prepared by thermal decomposition of SiC. Three different processes were compared: (A) standard ALD growth of Al2O3 using TMA and H2O; (B) ALD growth using TMA and O3; (C) pre-growth treatment of the substrate using O3 pulses followed by standard growth according to (A). The films and interfaces were studied using photoelectron spectroscopy and atomic force microscopy. While process (A) leads to an inhomogeneous nucleation of Al2O3, process (B) forms closed films with high nucleation density, but affects the integrity of the graphene layers. Process (C) leads to smooth and conformal Al2O3 films with little damage to the graphene substrate. The influence of the duration of the initial O3 exposure as well as of the growth temperature on the properties of the ALD-Al2O3 films is discussed.