Dresden 2009 – scientific programme
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O: Fachverband Oberflächenphysik
O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)
O 27.45: Poster
Tuesday, March 24, 2009, 18:30–21:00, P2
The growth of ultrathin Praseodymia films on passivated highly boron-doped Si(111) surfaces — •Sebastian Gevers1, Daniel Bruns1, Florian Bertram1, Timo Kuschel1, Martin Suendorf1, Lars Boewer2, Christian Sternemann2, Michael Paulus2, and Joachim Wollschlaeger1 — 1Fachbereich Physik, Universitaet Osnabrueck, Barbarastr. 7, 49069 Osnabrueck — 2DELTA, Universitaet Dortmund, Maria-Goeppert-Mayer-Str. 2, D-44227 Dortmund, Germany
The Germanium On Insulator (GOI) technology is a cost-effective method to integrate III-V optoelectronic materials like GaAs on the dominating Si material platform. This is due to the negligible thermal and lattice mismatch between Ge and GaAs. Good candidates for the insulating buffer material are lattice matched high quality praseodymia films to grow dielectric heterostructures on Si(111) with low defect density. However, it is essential to use passivated silicon substrates in order to prevent the formation of silicate at the substrate-oxide interface.
In this work hexagonal Pr2O3 films were grown on passivated highly boron-doped Si(111) substrates at different temperatures to realize and characterise high quality praseodymia films on passivated Si(111). During and after the growth process the surface structure and morphology were analysed with Spot Profile Analysis Low Energy Electron Diffraction (SPALEED). Additional X-Ray Reflection (XRR) investigations at DELTA were performed to analyse the formation of both oxide film and interfacial silicate.