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O: Fachverband Oberflächenphysik

O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)

O 27.50: Poster

Dienstag, 24. März 2009, 18:30–21:00, P2

SPA-LEED investigations on highly boron-doped Si(111) Surfaces after annealing in UHV — •Daniel Bruns, Sebastian Gevers, Timo Kuschel, Florian Bertram, Martin Suendorf, Thomas Weisemoeller, Gregor Steinhoff, and Joachim Wollschlaeger — Fachbereich Physik, Universitaet Osnabrueck, Barbarastr. 7, 49069 Osnabrück

’Dangling bonds’ at the Si(111) surface benefit the formation of thick interface layers between the silicon substrate and oxide films during the deposition process. This is often unwanted for potential electronic applications such as MOSFET or GOI. Therefore it is needful to investigate passivated silicon surfaces which may prevent intermixing of substrate and adsorbate.
Highly boron-doped Si(111) substrates were annealed at 1000^∘C and cooled down very slowly to achieve complete saturation of the ’dangling bonds’ under reconstruction to the Si(111)(√3×√3)R30^∘ phase. The surface morphology of the prepared substrates was analyzed by SPA-LEED. The diffraction peaks show multiple splittings caused by facetting of the surface. A model with big step-bunches and large terraces was developed to explain our experiments. Afterwards the stability of the (√3×√3)R30^∘ phase was tested under UHV conditions at temperatures from 300^∘C to 700^∘C.