Dresden 2009 – scientific programme

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O: Fachverband Oberflächenphysik

O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)

O 27.52: Poster

Tuesday, March 24, 2009, 18:30–21:00, P2

Direct measurement of surface stress anisotropy on Si(100) surfaces by means of SSIOD and homoepitaxial growth — •Friedrich Klasing and Michael Horn-von Hoegen — University of Duisburg-Essen, Institute for Experimental Physics

Surface stress is one of the most important physical quantities for the formation of structure and morphology of solid surfaces due to its large contribution to the total energy. Unfortunately, the direct measurement of surface stress is not possible, but it can be determined via the elastic response of a thin substrate as utilized in bending sample techniques like surface stress induced optical deflection (SSIOD) [1].
The morphology of bare Si(100) surfaces is strongly influenced by the anisotropic stress of the (2×1) dimer structure. Theory predicts compressive stress along the dimer bond (σ_||>0) and tensile stress perpendicular to the dimer bond (σ_⊥<0). For the technologically most important semiconductor surface - Si(100) - there still is no direct method to measure this important parameter.
Utilizing the formation of a single (2×1) domain structure during homoepitaxial growth under kinetic limitations at 400^∘− 500^∘C on a slightly vicinal surface it was possible to directly determine the difference of the tensor components Δσ = σ_⊥− σ_|| via SSIOD for the first time. The presented findings are well within predictions.
: A. Schell-Sorokin et al., Phys. Rev. Lett. 64(9), 1039 (1990)