Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)
O 27.58: Poster
Dienstag, 24. März 2009, 18:30–21:00, P2
Preparation and Characterization of Gold Micro-Crystals on an artificial SiO2-Layer on Silicon — Jawad Slieh, •Andreas Winter, Armin Brechling, Wiebke Hachmann, and Ulrich Heinzmann — Molecular and Surface Physics, Bielefeld University
We report on the fabrication of gold micro-crystals in the size range between several 100 nm and approximately 3 µm. Gold was deposited on dry oxidized silicon wafer pieces (001) by Ar-sputtering at a deposition rate of 0.11 nm/s and an Ar partial pressure of 13 Pa. The subsequent annealing was made in a nitrogen atmosphere at different temperatures (900∘C – 1050∘C) as well as at different annealing times (2 h – 10 h). The influence of the deposited gold layer thickness, of the annealing temperature and of the annealing time on the crystal size, on the crystal orientation and on the amount of single crystals were studied systematically. The lateral and vertical sizes of the gold clusters were characterized by means of Scanning Electron Microscopy and Atomic Force Microscopy, respectively. The orientation of the gold crystals relative to the substrate was characterized by X-Ray Diffraction and Laue Diffraction techniques.