Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)
O 27.72: Poster
Dienstag, 24. März 2009, 18:30–21:00, P2
Evaluation of near-field enhanced Raman spectroscopy on industrial silicon structures — •Benjamin Uhlig1, Jens-Hendrik Zollondz2, Martin Haberjahn2, Peter Kücher3, and Lukas M. Eng4 — 1Fraunhofer-Institut für Keramische Technologien und Systeme, Winterbergstrasse 28, 01277 Dresden, Germany — 2Qimonda Dresden GmbH & Co. OHG, Königsbrücker Strasse 180, D-01099 Dresden, Germany — 3Center of Competence CoC Metrology/Analytic, Fraunhofer-Center Nanoelektronische Technologien CNT, Königsbrücker Straße 180, D-01099 Dresden, Germany — 4Institut für Angewandte Photophysik, TU Dresden, George-Bähr-Straße 1, D-01069 Dresden, Germany
Following Moore's Law, semiconductor structures become smaller and smaller. The understanding of stress intentionally implemented in devices or stress in multi-layer components due to thermal mismatch is a major challenge for metrology. A promising technique to obtain highly localized stress information is Tip Enhanced Raman Spectroscopy (TERS). This paper discusses under which conditions TERS can be applied to industrial semiconductor structures and which effects can be expected. In order to obtain an idea of the enhancement effects on Silicon, we show several Surface Enhanced Raman Spectroscopy (SERS) experiments using gold and silver nanoparticles. Parameters like particle size, incident laser wavelength and polarization settings are discussed and a first prove of a near-field like, surface sensitive enhancement on a semiconductor sample is shown.