Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)
O 27.81: Poster
Dienstag, 24. März 2009, 18:30–21:00, P2
Thin epitaxial Bi(111) films on Si(111) studied by ARPES — •Holger Schwab1, Hendrik Bentmann1, Frank Forster1, Luca Moreschini2, Marco Grioni2, and Friedrich Reinert1,3 — 1Universität Würzburg, Experimentelle Physik II, Am Hubland, D-97074 Würzburg, Germany — 2Ecole Polytechnique Fédérale de Lausanne (EPFL), Institut de Physique des Nanostructures, CH-1015 Lausanne, Switzerland — 3Forschungszentrum Karlsruhe, Gemeinschaftslabor für Nanoanalytik, D-76021 Karlsruhe, Germany
Employing angle-resolved photoelectron spectroscopy (ARPES) we have studied thin films of Bi(111) on a Si(111) substrate. The film growth was characterized by reflection high energy electron diffraction (RHEED). We present Fermi surfaces and band structures for different film thicknesses. Quantum well states (QWS) as well asthe Bi(111) surface state are observed. Our measurements are in good agreement with previous results. The variation of the line width of the QWS was measured over a broad temperature range from 70K to 300K. This allows for the determination of the electron-phonon coupling constant λ as a function of film thickness.