Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)
O 27.87: Poster
Dienstag, 24. März 2009, 18:30–21:00, P2
In situ Epitaxy and Catalysis at the High Resolution Diffraction Beamline at PETRA III — •Carsten Deiter and Oliver H. Seeck — Hasylab am DESY, Notkestr. 85, 22607 Hamburg, Germany
In spring 2009 the new synchrotron radiation source PETRA III will become operational. At the High Resolution Diffraction Beamline (P08) the equipment and the beam parameters are highly suited for surface and interface studies. Beside traditional sample environments such as variable temperature (70K-700K) cells with vacuum (10−6mbar) or inert gas inside, an ultra high vacuum chamber will be available to perform in situ molecular beam epitaxy, sputter cleaning and/or catalysis x-ray experiments. The temperature of the sample can be varied from 100K to 1000K for metals and insulators and from 100K to 1500K for semiconductors, respectively. This chamber will be installed in a six circle diffractometer (Kohzu) for extreme angular resolution and supported by an UHV infrastructure close by.