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Verhandlungen
Verhandlungen
DPG

Dresden 2009 – scientific programme

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O: Fachverband Oberflächenphysik

O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)

O 27.9: Poster

Tuesday, March 24, 2009, 18:30–21:00, P2

Nanoscale charge transport measurements using a multi-tip scanning tunneling microscopePhilipp Jaschinsky, Jakob Wensorra, Mihail Ion Lepsa, and •Bert Voigtländer — Institute of Bio- und Nanosystems (IBN) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, D-52425 Jülich, Germany

We demonstrate the ability of a multi-tip scanning tunneling microscope (STM) combined with a scanning electron microscope (SEM) to perform charge transport measurements on the nanoscale. The STM tips serve as electric probes that can be precisely positioned relative to the surface nanostructures using the SEM control and the height reference provided by the tunneling contact. The tips work in contact, noncontact, and tunneling modes. We present vertical transport measurements on nanosized GaAs/AlAs resonant tunneling diodes and lateral transport measurements on the conductive surface of 7x7 reconstructed Si(111). The high stability of the double-tip STM allows nondestructive electrical contacts to surfaces via the tunneling gaps. We performed two-point electrical measurements via tunneling contacts on the Si(111)(7x7) surface and evaluated them using a model for the charge transport on this surface.

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