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O: Fachverband Oberflächenphysik
O 38: Nano-optics of metallic and semiconducting nanostructures (experiments I)
O 38.1: Vortrag
Mittwoch, 25. März 2009, 15:00–15:15, SCH A216
Nanometer scale imaging and spectroscopy of an organic semiconductor film — •Alfred J. Meixner1, Dai Zhang1, Ute Heinemeyer2, Frank Schreiber2, and Reinhard Scholz3 — 1Institute of Physical and Theoretical Chemistry, University of Tübingen — 2Institute of Applied Physics, University of Tübingen — 3Walter Schottky Institute, TU-München
The local electronic and optical properties of molecular semiconductors depend sensitively on the local film morphology such as grain boundaries and localized defects. However, quantitative spectroscopic measurements with a resolution matching the molecular morphology of organic semiconductor films has been plagued either by a lack of resolution, contrast or sensitivity. We have investigated an organic molecular semiconductor film (diindenoperylene, DIP) grown by molecular beam deposition on a Si (100) substrate covered with a native oxide layer by tip-enhanced nanometer scale spectroscopic imaging by the use of a novel parabolic-mirror assisted near-field optical microscope. We could for the first time resolve grain boundaries and defects both in the topography and in the near-field optical image and relate them to local PL- and Raman spectra with a spatial resolution on the order of 10 nm.