Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 42: Poster Session II (Nanostructures at surfaces: arrays; Nanostructures at surfaces: Dots, particles, clusters; Nanostructures at surfaces: Other; Nanostructures at surfaces: Wires, tubes; Metal substrates: Adsorption of O and/or H; Metal substrates: Clean surfaces; Metal substrates: Adsorption of organic/bio moledules; Metal substrates: Solid-liquid interfaces; Metal substrates: Adsorption of inorganic molecules; Metal substrates: Epitaxy and growth; Heterogeneous catalysis; Surface chemical reactions; Ab-initio approaches to excitations in condensed matter; Organic, polymeric, biomolecular films– also with adsorbates; Particles and clusters)
O 42.112: Poster
Mittwoch, 25. März 2009, 17:45–20:30, P2
High energy photoelectron spectroscopy of HBC-C14 — •Vajiheh Alijani1, S. Shahabedin Naghavi1, Andrei Gloskovskii1, Gerhard H. Fecher1, Claudia Felser1, Katerina Medyanyk2, and Gerd Schönhense2 — 1Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg - University, 55099 Mainz — 2Institute of Physics, Johannes Gutenberg - University, 55099 Mainz
A charge transfer (CT) complex is defined as an electron donor /— electron acceptor complex, characterized by electronic transitions to an excited state. In this excited state, there is a partial transfer of a charge from the donor to the acceptor. CT complexes are good candidates as photovoltaic cells, transistors and superconductors. Thin films of HBC-C14 were prepared on Si/SiOx substrate by spin coating and characterised by profilometry and atomic force microscopy. The films were investigated by X-Ray photoelectron spectroscopy with laboratory XPS source and synchrotron excitation. The excitation energy was varied in the range from 1.4 keV to 8 keV. We show that high energy photoelectron spectroscopy at intermediate energies is better suited than at very high energies for studies of organic thin films. The reason is the enhanced contribution of the Si/SiOx substrate to the photoemission signal at higher photon energies. This is caused by very large inelastic electron mean free path that becomes comparable with the film thickness of few tens of nm at high kinetic energies of photoelectrons.
Funded by DFG through Transregio SFB TRR 49 (Project B8).