Dresden 2009 – scientific programme

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O: Fachverband Oberflächenphysik

O 42: Poster Session II (Nanostructures at surfaces: arrays; Nanostructures at surfaces: Dots, particles, clusters; Nanostructures at surfaces: Other; Nanostructures at surfaces: Wires, tubes; Metal substrates: Adsorption of O and/or H; Metal substrates: Clean surfaces; Metal substrates: Adsorption of organic/bio moledules; Metal substrates: Solid-liquid interfaces; Metal substrates: Adsorption of inorganic molecules; Metal substrates: Epitaxy and growth; Heterogeneous catalysis; Surface chemical reactions; Ab-initio approaches to excitations in condensed matter; Organic, polymeric, biomolecular films– also with adsorbates; Particles and clusters)

O 42.14: Poster

Wednesday, March 25, 2009, 17:45–20:30, P2

STM/STS Investigations of early stage of the growth of silicides — •Maciej Cegiel, Maciej Bazarnik, Jan Rönspies, and Herbert Pfnür — Leibniz Universität Hannover, Institut für Festkörperphysik, Appelstr. 2, 30167 Hannover, Germany

Investigations of transition metals and their silicides are extremely interesting as for certain transition metals stable, lattice matched and metallic structures can be grown. In general this process is compatible with silicon technology, i.e. these silicides can be used as contacts and interconnects in electric circuits. Furthermore, using lattice anisotropies can be used skilfully to grow either quantum dots or atomic wires with extraordinary high aspect ratios and one-dimensional band structures simply by self-organization. This fact facilitates silicides even for applications in nanoelectronics devices. In particular, the shape and the electronic properties of these objects depend not only on the annealing temperature but also on the initial amount of the deposited material. In this contribution we report on Co, Ti and Dy silicide formation on Si(111) and vicinal Si(111) surfaces. For the former the the diffusion dependent formation of silicide islands have been investigated for both (7×7) and Ni (√19 × √19) substrates. For submonolayer coverage of Ti the early state of growth on Si(111) 7×7 has been studies by STM. Using STS resonant states with maxima at −1,19 eV (HOMO), +0,49 eV and +1,51 eV (LUMO) were found in between Ti clusters and discussed as quantum well states. On the contrary, this states were not found in between Ti clusters grown Si(111)-(√19 × √19)