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O: Fachverband Oberflächenphysik

O 47: Methods: Scanning probe techniques II

O 47.1: Vortrag

Donnerstag, 26. März 2009, 10:30–10:45, SCH A316

Investigation of Locally Stored Charges in Silica by Kelvin Probe Force Microscopy — •Carsten Maedler, Harald Graaf, and Christian von Borczyskowski — Center of Nanostructured Materials and Analytics, Chemnitz University of Technology, D-09107 Chemnitz, Germany

The storage and dissipation of positive and negative charges in thin silicon oxide films were studied in a local manner using Kelvin Probe Force Microscopy. The charges were injected into the oxide by applying a voltage between an electric conductive tip and the silicon beneath the oxide while the tip was in close proximity to the silicon oxide surface. The method used for investigation of the charges, Kelvin Probe Force Microscopy allows the simultaneous imaging of the electrical and topographical properties of a surface. Various patterns were created, where the smallest achieved structures were about 100 nm wide. Because silanol groups are supposed to be the main trapping site for charges we studied the charging properties of silica with various pre-treatment and thus different amounts of silanol groups. A different approach is to passivate the surface with hydrophobic monolayers. We achieved a considerable decrease in charge spreading by the attachment of a layer of Octadecyltrichlorosilane forming a hydrophobic monolayer on the silica surface.