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O: Fachverband Oberflächenphysik

O 5: Nanostructures at surfaces: Wires, tubes

O 5.6: Vortrag

Montag, 23. März 2009, 12:30–12:45, SCH A215

Silicon overgrowth of rare earth silicide nanowires on Si(001) — •Matthias Vetterlein, Martina Wanke, Martin Franz, and Mario Dähne — Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Deutschland

The overgrowth of rare earth silicide nanowires on the Si(001) surface by silicon has been investigated by STM. Free standing broad silicide nanowires present interesting properties such as a one-dimensional metallicity along the wires. Due to this metallicity the self assembled nanowires may be used e.g. as nano-interconnects in advanced chipdesigns. To prevent oxidation and destruction of the nanowires under ambient conditions a suitable capping is required. For this purpose, silicon is an ideal capping material because of its perfect lattice match with the substrate. To the best of our knowledge we present for the first time silicon capping experiment of rare earth silicide nanowires. Our STM results show that capping with small amounts of silicon does not destroy the wires. After further annealing the wires are still present under the silicon cap layer. This indicates the feasibility of nanowire capping by silicon. This project was supported by the DFG, project number Da 408/11.