Dresden 2009 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 63: Semiconductor substrates: Adsorption

O 63.6: Vortrag

Freitag, 27. März 2009, 12:30–12:45, SCH A118

XPD-Measurement of the Si/SiO₂-interface on Si(110) — •Tobias Lühr^{1, 2}, Daniel Weier^{1, 2}, Frank Schönbohm^{1, 2}, Sven Döring^{1, 2}, Ulf Berges^{1, 2}, and Carsten Westphal^{1, 2} — ¹Fakultät Physik - Technische Universität Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund, Germany — ²DELTA - Technische Universität Dortmund, Maria-Goeppert-Mayer-Str. 2, D 44227 Dortmund, Germany

In the past, the investigation of the silicon (100) surface was in the center of many research activities. However, the structure of the interface for the Si(110)-surface is still unknown. In order to determine the structure of the oxidized Si(110)-surface XPS and angle-scanned XPD experiments were conducted. The experiments were performed at the synchrotron storage ring DELTA (Dortmund). In order to investigate the interface structure, we recorded high resolution photoemission spectra of the Si 2p signal with a photon energy of hν = 180eV. The spectra contain seven components which correspond to photoemission from emitters located in the interface region and in the bulk. Polar angle depending intensity plots of the recorded signals reveal the relative positions of their respective emitters in the interface. The Si¹⁺ and Si²⁺ components are located in the same layer close to the bulk. The Si⁴⁺ atoms are part of the silicon oxide film at the surface. The diffraction patterns clearly indicate a crystalline interface structure below the amorphous SiO₂-layer. In order to determine the structure it is necessary to compare the experimental diffraction patterns with simulated XPD-patterns for structure models. A genetic algorithm was developed for the structure model optimization.