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O: Fachverband Oberflächenphysik

O 7: Semiconductor substrates

O 7.3: Vortrag

Montag, 23. März 2009, 11:45–12:00, SCH A315

Epitaxial growth of micrometer-sized Cu-pyramides on Silicon — •Susanne Seyffarth and Hans-Ulrich Krebs — Institut für Materialphysik, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

Studying the morphology of thin metallic films is very important regarding the properties of these films. Therefore thin Cu films on Si(111) and Si(100) substrates were prepared using pulsed laser deposition (PLD) in ultra high vacuum. At elevated substrate temperatures above 200 °C epitaxial growth of three dimensional pyramides with edge lengths of about five micrometers and heights up to 500 nanometers is observed using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The base area of these islands is a triangle for Si(111) and a square for Si(100) depending on the orientation of the substrate. Epitaxial relationships with the Si substrates were studied using x-ray diffraction analysis (XRD). Furthermore periodic alignments of the pyramidal islands was achieved. The shape of the pyramidal islands was influenced by alloying Ni during deposition process. Additionally the decomposition of the Cu-islands was examined.