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O: Fachverband Oberflächenphysik

O 7: Semiconductor substrates

O 7.4: Vortrag

Montag, 23. März 2009, 12:00–12:15, SCH A315

MOVPE preparation of Si(100) surfaces for III-V hetero epitaxy — •Henning Döscher, Peter Kleinschmidt, Sebastian Brückner, Anja Dobrich, Christian Höhn, and Thomas Hannappel — Helmholtz-Zentrum Berlin für Materialien und Energie, Glienicker Str. 100, 14109 Berlin

The epitaxial growth of III-V semiconductors on silicon substrates is a major challenge for the integration of opto- and micro-electronic devices. But still, there is little experience in the preparation of the crucial Si(100) surface with metal-organic vapor phase epitaxy (MOVPE) and the respective interfaces to III-V materials.

In many ways the applied process environment common for the opto-electronic industry differs from the ultra high vaccuum (UHV) conditions typical in surface science - e.g. by the distinct presence of hydrogen as precursor residue and as process gas. For the desired growth of polar materials on non-polar substrates, the hetero-interface represents a source of highly corruptive anti-phase disorder. Ideally, this effect may be surpressed by the preparation of a completely double-stepped substrate surface with only one reconstruction domain.

Here, the preparation of clean Si(100) surfaces by MOVPE growth is investigated with regard to the requirements of hetero-epitaxial GaP growth. A contamination free transfer mechanism to UHV enabled X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), scanning tunnelling microscopy (STM) and Fourier-transform infrared spectroscopy (FTIR) charaterization of the prepared surfaces, while reflectance anisotropy spectroscopy (RAS) was applied in-situ.