O 7: Semiconductor substrates
Montag, 23. März 2009, 11:15–13:00, SCH A315
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11:15 |
O 7.1 |
Electronic structure of the cleaved non-polar GaN(1100) surface — •P. Löptien, M. Bertelli, M. Wenderoth, R.G. Ulbrich, A. Rizzi, J. Malindretos, M.C. Righi, A. Catellani, A. Ferretti, and L.C. Samos
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11:30 |
O 7.2 |
Impurity induced charge density oscillations in the π-bonded chains of the Si(111)-2×1 surface — •Karolin Löser, Martin Wenderoth, Thomas K. A. Spaeth, Jens K. Garleff, and Rainer G. Ulbrich
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11:45 |
O 7.3 |
Epitaxial growth of micrometer-sized Cu-pyramides on Silicon — •Susanne Seyffarth and Hans-Ulrich Krebs
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12:00 |
O 7.4 |
MOVPE preparation of Si(100) surfaces for III-V hetero epitaxy — •Henning Döscher, Peter Kleinschmidt, Sebastian Brückner, Anja Dobrich, Christian Höhn, and Thomas Hannappel
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12:15 |
O 7.5 |
Ge nanoisland growth on the In/Si(112)-"(3.5×1)" surface — •Moritz Speckmann, Thomas Schmidt, Jan Ingo Flege, Torsten Wilkens, and Jens Falta
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12:30 |
O 7.6 |
Structural properties of sub-monolayer InAs-coverages on GaAs(001) — •Christopher Prohl, Britta Höpfner, Jan Grabowski, Holger Eisele, and Mario Dähne
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12:45 |
O 7.7 |
Structural properties of the InAs/GaAs system before and after quantum dot formation. — •Britta Höpfner, Christopher Prohl, Jan Grabowski, Holger Eisele, and Mario Dähne
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