O 8: Focused Session: Epitaxial Graphene I
Montag, 23. März 2009, 11:15–12:45, SCH 251
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11:15 |
O 8.1 |
Topical Talk:
Atmospheric pressure graphitization of SiC: a route towards wafer-size graphene films — K.V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G.L. Kellog, L. Ley, J.L. McChesney, T. Ohta, S.A. Reshanov, J. Röhrl, E. Rotenberg, A.K. Schmid, D. Waldmann, H.B. Weber, and •Th. Seyller
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11:45 |
O 8.2 |
Atomic Hole Doping of Graphene — •Isabella Gierz, Christian Riedl, Ulrich Starke, Christian Ast, and Klaus Kern
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12:00 |
O 8.3 |
Molecular Hole Doping and Band Structure Engineering of Epitaxial Graphene on SiC — •Camilla Coletti, Christian Riedl, Dong Su Lee, Klaus von Klitzing, Jurgen H. Smet, and Ulrich Starke
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12:15 |
O 8.4 |
Electronic excitations in epitaxial graphene layers grown on SiC(0001) — •Thomas Langer, Herbert Pfnür, Christoph Tegenkamp, Hans Werner Schumacher, and Uwe Siegner
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12:30 |
O 8.5 |
Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2 — Dong Su Lee, •Christian Riedl, Benjamin Krauss, Klaus von Klitzing, Ulrich Starke, and Jurgen H. Smet
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