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SYTG: Symposium Transport in Graphene

SYTG 1: Symposium: Transport in Graphene

SYTG 1.2: Hauptvortrag

Dienstag, 24. März 2009, 14:30–15:00, BAR SCHÖ

Electronic Transport in Graphene Nanostructures — •Thomas Ihn, Christoph Stampfer, Johannes Güttinger, Francoise Molitor, Stephan Schnez, Arnhild Jacobsen, and Klaus Ensslin — ETH Zurich, 8093 Zurich, Switzerland

Experimentalists have started to investigate effects of mesoscopic physics well known from experiments on GaAs, such as the quantum Hall effect, conductance quantization, the Aharonov-Bohm effect and the Coulomb blockade effect, in graphene. It is the goal of these investigations to find ways to confine charge carriers in this material system with its gapless band structure, to exploit the field effect for electrostatic control of electronic properties on the nanoscale, and to explore the feasibility of tailored quantum circuits for future electronics.

We will give an overview over experiments carried out in our team on narrow graphene constrictions and quantum dot devices at liquid Helium temperatures. These nanostructure systems, defined by electron beam lithographic techniques, are equipped with graphene in-plane gates for local electrostatic control. Our measurements demonstrate the interplay of lithographic confinement, interactions manifest in the appearance of the Coulomb blockade effect, and disorder, even in the simplest single constriction devices.

Despite the significant complexity of the physics in single constrictions, well controllable quantum dot devices exhibiting Coulomb blockade physics can be fabricated, and even on-chip charge detection techniques have been realized in our experiments.