DPG Phi
Verhandlungen
Verhandlungen
DPG

Dresden 2009 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

TT: Fachverband Tiefe Temperaturen

TT 23: Transport: Nanoelectronics III - Molecular Electronics

TT 23.5: Talk

Wednesday, March 25, 2009, 10:30–10:45, HSZ 105

Charge-memory polaron effect in molecular junctions — •Dmitry A. Ryndyk1, Pino D’Amico1, Gianaurelio Cuniberti2, and Klaus Richter11Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany — 2Institute for Material Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, D-01062 Dresden

The charge-memory effect, bistability and switching between charged and neutral states of a molecular junction, as observed in recent STM experiments, is considered within a minimal polaron model. We show that in the case of strong electron-vibron interaction the rate of spontaneous quantum switching between charged and neutral states is exponentially suppressed at zero bias voltage but can be tuned through a wide range of finite switching timescales upon changing the bias. We further find that, while junctions with symmetric voltage drop give rise to random switching at finite bias, asymmetric junctions exhibit hysteretic behavior enabling controlled switching. Lifetimes and charge-voltage curves are calculated by the master equation method for weak coupling to the leads and at stronger coupling by the equation-of-motion method for nonequilibrium Green functions.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2009 > Dresden