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TT: Fachverband Tiefe Temperaturen
TT 26: Transport: Graphene and Carbon Nanotubes
TT 26.13: Vortrag
Mittwoch, 25. März 2009, 17:45–18:00, HSZ 03
Ultra-sensitive carbon nanotube resonant tunneling transistor — Soren Andresen1,3, •Lorenz Lechner2, Fan Wu2, Romain Danneau2, and Pertti Hakonen2 — 1Niels Bohr Institute, Copenhagen, Denmark — 2Low Temperature Laboratory, Helsinki University of Technology, Helsinki, Finland — 3Nanoscience Center, University of Copenhagen, Copenhagen, Denmark
We have studied resonant tunneling field-effect transistors (RTFET) made from single-walled carbon nanotube quantum dots in the Fabry-Pérot regime. We show excellent charge sensitivity of 8.0 · 106 e/Hz1/2 with a carrier frequency of 719 MHz at 4.2 K. This resolution is comparable to the best values so far reported for radio frequency single electron transistors (RF-SET). Unlike RF-SETs operating in the Coulomb blockade regime our device can work as an electron interferometer up to temperatures of 23 K.