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TT: Fachverband Tiefe Temperaturen
TT 35: Postersession Transport: Nanoelectronics, Quantum Coherence and Quantum Information, Fluctuations and Noise
TT 35.10: Poster
Mittwoch, 25. März 2009, 14:00–18:00, P1A
Electrical-physical characteristics of Si/SiO2/Ni nanoelectronic systems with ion tracks in strong magnetic fields — •Alexander Petrov1, Egor Kaniukov1, Sergey Demyanov1, Ivan Svito2, Alexander Fedotov2, and Eugene Belonogov3 — 1Scientific-Practical Materials Research Centre NAS of Belarus, Minsk, Belarus — 2Belarusian State University, Minsk, Belarus — 3Voronezh State Technical University, Voronezh, Russia
The present research deals with the swift heavy ion track technology, which includes irradiation of a material by Au ions (energy 350 MeV, fluence 108 cm−2), chemical etching of resulting swift heavy ion tracks and precision electrochemical deposition of magnetic metals in the resulting nanopores.
In this way structures on the base of SiO2/n-Si with nanopores in silicon dioxide layers, filled with Ni nanoclusters, have been prepared and studied. Investigations of current-voltage dependences and magnetic characteristics of the obtained structures with Ni nanoclusters at strong magnetic fields up to 8 T and at low temperatures in the range of 1.8 K - 150 K have shown a possibility of control of these nanostructures properties by the effect of magnetic fields.
The obtained results confirm a feasibility of the use of the Si/SiO2/Ni nanoelectronic systems with swift heavy ion tracks in low-temperature spintronic sensor devices.